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ELECTRONICS/COMPUTER HARDWARE/COMMUNICATIONS
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Monolithic Array of Laser Diodes Expand Laser Applications
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Patent Trees Listed by: |
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Patent |
Patent Number |
Company |
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"Stacked active region laser array for multicolor emissions" (No. 5,386,428: filed November 2, 1993; granted January 31, 1995) |
5,386,428 |
Xerox Corporation |
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"Method of fabricating a stacked active region laser array" (No. 5,436,193: filed November 2, 1993; granted July 25, 1995) |
5,436,193 |
Xerox Corporation |
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"Index guided semiconductor laser diode with shallow selective IILD" (No. 5,832,019: filed November 28, 1994; granted November 3, 1998) |
5,832,019 |
Xerox Corporation |
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"Semiconductor laser or array formed by layer intermixing" (No. 5,708,674: filed January 3, 1995; granted January 13, 1998) |
5,708,674 |
Xerox Corporation |
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"Index guided semiconductor laser diode with reduced shunt leakage currents" (No. 5,717,707: filed January 3, 1995; granted Febraury 10, 1998) |
5,717,707 |
Xerox Corporation |
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"Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD" (No. 5,766,981: filed January 4, 1995; granted June 16, 1998) |
5,766,981 |
Xerox Corporation |
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"Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films" (No. 5,654,229: filed April 26, 1995; granted August 5, 1997) |
5,654,229 |
Xerox Corporation |
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"Alternative doping for AlGaInP laser diodes fabricated by impurity-induced layer disordering (IILD)" (No. 5,745,517: filed December 29, 1995; granted April 28, 1998) |
5,745,517 |
Xerox Corporation |
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"Loss-guided semiconductor lasers" (No. 5,812,576: filed August 26, 1996; granted September 22, 1998) |
5,812,576 |
Xerox Corporation |
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"Transversely injected multiple wavelength diode laser array formed by layer disordering" (No. 5,764,676: filed September 26, 1996; granted June 9, 1998) |
5,764,676 |
Xerox Corporation |
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"Polarization mode selection by distributed Bragg reflector in a quantum well laser" (No. 5,784,399: filed December 19, 1996; granted July 21, 1998) |
5,784,399 |
Xerox Corporation |
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"Semiconductor devices constructed from crystallites" (No. 5,977,612: filed December 20, 1996; granted November 2, 1999) |
5,977,612 |
Xerox Corporation |
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"Edge-emitting semiconductor lasers" (No. 5,886,370: filed May 29, 1997; granted March 23, 1999) |
5,886,370 |
Xerox Corporation |
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"Deep native oxide confined ridge waveguide semiconductor lasers" (No. 6,044,098: filed August 29, 1997; granted March 28, 2000) |
6,044,098 |
Xerox Corporation |
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"Independently addressable laser array with native oxide for optical confinement and electrical isolation" (No. 6,052,399: filed August 29, 1997; granted April 18, 2000) |
6,052,399 |
Xerox Corporation |
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"In-situ acceptor activation in group III-v nitride compound semiconductors" (No. 5,926,726: filed September 12, 1997; granted July 20, 1999) |
5,926,726 |
SDL, Inc. / Xerox Corporation |
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"Independently addressable semiconductor laser arrays with buried selectively oxidized native oxide apertures" (No. 5,917,847: filed September 26, 1997; granted June 29, 1999) |
5,917,847 |
Xerox Corporation |
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"Monolithic red/ir side by side laser fabricated from a stacked dual laser structure by ion implantation channel" (No. 5,999,553: filed November 25,1997; granted December 7, 1999) |
5,999,553 |
Xerox Corporation |
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"Monolithic independently addressable Red/IR side by side laser" (No. 6,058,124: filed November 25, 1997; granted May 2, 2000) |
6,058,124 |
Xerox Corporation |
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"Method of manufacturing vertical cavity surface emitting semiconductor lasers using intermixing and oxidation" (No. 5,915,165: filed December 15, 1997; granted June 22, 1999) |
5,915,165 |
Xerox Corporation |
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"Red and blue stacked laser diode array by wafer fusion" (No. 5,920,766: filed January 7, 1998; granted July 6, 1999) |
5,920,766 |
Xerox Corporation |
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"Infrared and blue stacked laser diode array by wafer fusion" (No. 6,104,740: filed January 7, 1998; granted August 15, 2000) |
6,104,740 |
Xerox Corporation |
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"Red, infrared, and blue stacked laser diode array by wafer fusion" (No. 6,144,683: filed January 7, 1998; granted November 7, 2000) |
6,144,683 |
Xerox Corporation |
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"Multiple wavelength laser arrays by flip-chip bonding" (No. 6,136,623: filed May 6, 1998; granted October 24, 2000) |
6,136,623 |
Xerox Corporation |
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"Fabrication of group III-V nitrides on mesas" (No. 6,163,557: filed May 21, 1998; granted December 19, 2000) |
6,163,557 |
Xerox Corporation |
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"AlGaInN LED and laser diode structures for pure blue or green emission" (No. 6,233,265: filed July 31, 1998; granted May 15, 2001) |
6,233,265 |
Xerox Corporation |
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"Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes" (No. 6,567,443: filed September 29, 1999; granted May 20, 2003) |
6,567,443 |
Xerox Corporation |
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